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Based on our recently developed quantum transport theory in term of an exactmaster equation, the corresponding particle-number resolved ($n$-resolved)master equation and the related shot noise spectrum formalism covering the fullfrequency range are constructed. We demonstrate that the noise spectra oftransport current through single quantum dot and double quantum dots showcharacteristic steps and/or peak-dips in different tunneling frequency regimesthrough tuning the applied bias voltage and/or gate voltage at lowtemperatures. The peak-dips crossing the tunneling resonant frequencies is acombination effect of non-Markovian and cotunneling processes. Thesevoltage-dependent tunneling resonance characteristics can be utilized toeffectively modulate the internal Rabi resonance signature in the noisespectrum.

Noise spectrum of quantum transport through quantum dots: a combined effect of non-Markovian and cotunneling processes