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In a recent paper Hao et al. [Phys. Rev. B 80, 035329 (2009)] reportedvariational calculations of energy spectrum for shallow hydrogenic donor in thestructure of semiconductor/insulator/metal with a new type of trial wavefunction. They also performed calculations for semiconductor/insulator systemand found that their method gives energy values lower than those obtained byMacMillen and Landman [Phys. Rev. B 29, 4524 (1984)]. As follows from theseresults MacMillen and Landman have got much larger errors in energy values thanthey expected. However we confirm that the theoretical approach suggested byMacMillen and Landman gives rather accurate energy values for the system ofhydrogenic donor near the interface between semiconductor and insulator.

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