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A scattering method is used to calculate the surface band structure ofAl(111) from 8.6 eV below the Fermi level to 9 eV above it. This method hasrarely been implemented previously. The complete complex bulk and surface bandstructure is also shown for key values of the crystal surface-parallelmomentum. The surface region is treated semi-empirically from a small number ofexperimentally determined quantities. We find agreement over the whole surfaceBrillouin zone for surface states compared with recent theoretical ab initioresults and experiment. Differences with respect to surface resonances detectedby recent theoretical methods are discussed. In particular a class of surfaceresonances is detected here that may be surface-layer localised and resultsfrom very wide partial surface-projected energy gaps where real lines in thecomplex bulk band structure extend from band minima to infinity. Other methodsdo not appear to have detected these resonances. They may have an effect onphotoemission intensity profiles and may account for previous unexplainedexperiment features considered to be "a kind of surface enhancement at partialgap edges". This scattering method provides a single picture for the formationand classification of surface states and resonances.

Surface electronic structure for Al(111) by a scattering method