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A new approach to the growth of diluted magnetic semiconductors with twodimensional electron gas in InAs quantum well has been developed. The method isbased on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Teheterostructures with a III-V/II-VI interface inside. The giant Zeemansplitting of the InAs conduction band caused by exchange interaction with Mn2+ions has been proved by measuring the microwave radiation induced spinpolarized electric currents.

Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs