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Electrical conductivity, Hall effect and magnetoresistance of In$_2$O$_3$:Snthin films deposited on a glass substrates at different temperatures and oxygenpressures, as well as the films treated in a hydrogen plasma, have beeninvestigated in the temperature range 1.5-300 K. The observed temperaturedependences of resistivity were typical for metallic transport of electronsexcept temperature dependence of resistivity of the In$_2$O$_3$:Sn filmdeposited in the oxygen deficient atmosphere. The electron concentration andmobility for the film deposited at 230$^\circ$C was larger than that for thefilm deposited nominally at room temperature. Short (5 minutes) treatment ofthe films in hydrogen plasma leads to the enhancement of electricalconductivity while longer (30 minute) treatment has the opposite effect. Theelectrical measurements were accompanied by AFM and SEM studies of structuralproperties, as well as by XPS analysis. Basic on structural and electricalmeasurements we conclude the reduction process initiated by the hydrogen plasmaprovides essential modification of the ITO films surface. At the same time,electrical properties of the remaining (located beneath the surface layer)parts of the ITO films remain mostly unchangeable. XPS analysis shows thatgrown in situ oxygen deficient ITO films have enhanced DOS between the Fermilevel and the valence band edge. The extra localized states behave as acceptorsleading to a compensation of $n$-type ITO. That can explain lower $n$-typeconductivity in this material crossing over to a Mott-type hopping.

Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films