English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We report on a theoretical and experimental study of CuMn-V antiferromagnets.Previous works showed low-temperature antiferomagnetism and semimetalelectronic structure of the semi-Heusler CuMnSb. In this paper we presenttheoretical predictions of high-temperature antiferromagnetism in the stableorthorhombic phases of CuMnAs and CuMnP. The electronic structure of CuMnAs isat the transition from a semimetal to a semiconductor and we predict that CuMnPis a semiconductor. We show that the transition to a semiconductor-like bandstructure upon introducing the lighter group-V elements is present in both themetastable semi-Heusler and the stable orthorhombic crystal structures. On theother hand, the orthorhombic phase is crucial for the high N\'eel temperature.Results of X-ray diffraction, magnetization, transport, and neutron diffractionmeasurements we performed on chemically synthesized CuMnAs are consistent withthe theory predictions.

CuMn-V compounds: a transition from semimetal low-temperature to semiconductor high-temperature antiferromagnets