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An oversight of several previous results from local density approximation(LDA) calculations appear to have led to an incomplete, and hence misleading,characterization of the capability of density functional theory (DFT) todescribe correctly the electronic properties of wurtzite GaN (w-GaN) and InN(w-InN) [Phys. Rev. B 82, 115102 (2010)]. These comments are aimed atpresenting a different picture of the above capability for DFT calculationsthat solve self-consistently the system of equations of DFT. They alsounderscore, in light of the experimentally established Burstein-Moss effect,the need to specify the carrier density when citing a band gap for w-InN.

Comments on "Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, Gap bowing, and effective masses"