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We compare polariton lasing with photon lasing of a planar GaAs/GaAlAsmicrocavity with zero detuning between the bare cavity mode and the bareexciton mode. For the emission from the lower energy-momentum dispersion branchwe find a two-threshold behavior of the ground state in the input-output curvewhere each transition is accompanied by characteristic changes of the in-planemode dispersion. In particular, we show that the thresholds are unambiguouslyevidenced in the photon statistics of the emission based on the second-ordercorrelation function. Moreover, the distinct two-threshold behavior isconfirmed in the evolution of the emission pulse duration.

Distinguishing photon and polariton lasing from GaAs microcavities by spectral and temporal analysis of the two-threshold behavior