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In this Letter, four-point magnetotransport of high mobility InGaAs/InPheterointerfaces is measured from 1.6 K to 300 K and from 0 to 15 T, and ananalysis is shown whereby the mobility and density of the two-dimensional (2D)accumulation layer can be separately characterized from that of the parallelconducting dopant layer over all but a small intermediate temperature range.Standard magnetotransport regimes are defined as the temperature increases from1.6 K to 300 K, namely quantum Hall (QH), Shubnikov de Haas (SdH), and Druderegimes (D), and in the QH and D regimes different analyses are applied todeduce densities and mobilities of both layers separately. Quantitativeconditions for the intermediate SdH regime are defined, within which both QHand D analyses fail. The density and activation energy of unintentional donorsat the InP epilayer/substrate interface is deduced. At base temperature, QHminima are resolved down to B = 0.4 T at nu = 20, revealing a mobility of mu =160,000 cm^2/Vs. The 2D system maintains this high mobility up to at least 40 Kin this high quality structure.

Separating parallel conduction from two-dimensional magnetotransport in high mobility InP/InGaAs MOCVD-grown heterostructures