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Cuprous oxide (Cu2O) nanowires were grown by a simple, catalyst-free thermaloxidation method starting from a copper foil substrate. Wire growth wasperformed at different conditions by varying oxygen partial pressure andheating temperature, and produced structural defects such as stacking faultsand twin structures of grown nanowires were characterized by transmissionelectron microscopy. A moderate oxygen partial pressure ~5% with a relativelyhigh temperature at 500 oC is found to be an optimal condition for growinghigh-quality Cu2O nanowires, while either lowering temperature or enhancing O2partial pressure can yield higher density of planar defects. In order tofurther investigate optical properties of grown nanowires, photoluminescencemeasurements were also performed and correlated with structuralcharacterization results, indicating that increase of structural defects suchas stacking faults and twins tended to enhance broad defect-related emissionsand suppress the exciton emissions near Cu2O band-edge.

Correlation between structural defects and optical properties of Cu2O nanowires grown by thermal oxidation