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We present experimental and theoretical results on hole-spin dynamics in bulkGaAs after ultrafast optical excitation. The experimental differentialtransmission are compared with a dynamical calculation of the momentum-resolvedhole distributions, which includes the carrier-carrier, carrier-phonon andcarrier-impurity interaction at the level of Boltzmann scattering integrals. Weobtain good agreement with the experimentally determined hole-spin relaxationtimes, but point out that depending on how the spin-polarization dynamics isextracted, deviations from an exponential decay at short times occur. We alsostudy theoretically the behavior of the spin-relaxation for heavily p-dopedGaAs at low temperatures.

Ultrafast Hole-Spin Dynamics in Optically Excited Bulk GaA