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We present results of a fabrication-process development for the lithographicpattern transfer into the sub-100nm range by combining electron-beamlithography and reactive dry etching to obtain high quality niobium-basedlight-sensitive superconducting devices. To achieve this spatial resolution, wesystematically investigated the stability of the positive organic etching masksZEP 520A and PMMA 950k in different properly operated fluoride based plasmadischarges. The chemically more robust ZEP 520A was used for defining thenanoscaled superconductors during the dry plasma etching. Our etching recipe isappropriate for a precisely controlled removal of a number of transitionmetals, their nitrides and a number of lithographic resists. Our processyielded lightsensitive superconducting devices made from NbN with smallestplanar lateral dimensions of about 50nm with a critical temperature Tc(0) ofabout 13K , which is close to the transition temperature of the unstructuredthin film. Our ultra-narrow current paths are able to permanently carrybias-currents up to 60% of the theoretical de-pairing current-limit.

Symbiotic Optimization of the Nanolithography and RF-Plasma Etching for Fabricating High-Quality Light-Sensitive Superconductors on the 50 nm Scale