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We report on a local spin valve effect observed unambiguously in lateralall-semiconductor all-electrical spin injection devices, employingp+-(Ga,Mn)As/n+-GaAs Esaki diode structures as spin aligning contacts. Wediscuss the observed local spin-valve signal as a result of interplay betweenspin-transport-related contribution and tunneling anisotropic magnetoresistanceof magnetic contacts. The magnitude of the spin-related magnetoresistancechange is equal to 30 Ohm which is twice the magnitude of the measurednon-local signal.

Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices