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We show ~10x polariton-enhanced infrared reflectivity of epitaxial grapheneon 4H-SiC, in SiC's restrahlen band (8-10um). By fitting measurements totheory, we extract the thickness, N, in monolayers (ML), momentum scatteringtime, Fermi level position of graphene and estimate carrier mobility. Byshowing that 1/root(ns), the carrier concentration/ML, we argue that scatteringis dominated by short-range interactions at the SiC/graphene interface.Polariton formation finds application in near-field optical devices such assuperlenses.

Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC