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The nonohmic conductivity of 2D hole gas (2DHG) in single$GaAsIn_{0.2}Ga_{0.8}AsGaAs$ quantum well structures within the temperaturerange of 1.4 - 4.2K, the carrier's densities $p=(1.5-8)\cdot10^{15}m^{-2}$ anda wide range of conductivities $(10^{-4}-100)G_0$ ($G_0=e^2/\pi\,h$) wasinvestigated. It was shown that at conductivity $\sigma>G_0$ the energyrelaxation rate $P(T_h,T_L)$ is well described by the conventional theory (P.J.Price J. Appl. Phys. 53, 6863 (1982)), which takes into account scattering onacoustic phonons with both piezoelectric and deformational potential couplingto holes. At the conductivity range $0.01G_0<\sigma<G_0$ energy the relaxationrate significantly deviates down from the theoretical value. The analysis of$\frac{dP}{d\sigma}$ at different lattice temperature $T_L$ shows that thisdeviation does not result from crossover to the hopping conductivity, whichoccurs at $\sigma<10^{-2}$, but from the Pippard ineffectiveness.

Energy relaxation rate of 2D hole gas in GaAs/InGaAs/GaAs quantum well within wide range of conductivitiy