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We report electrically switchable polarization and ferroelectric domainscaling over a thickness range of 5-100 nm in BiFeO3 films deposited on [110]vicinal substrates. The BiFeO3 films of variable thickness were deposited withSrRuO3 bottom layer using pulsed laser deposition technique. These films havefractal domain patterns and the domain width scales closely with the squareroot of film thickness, in accordance with the Landau-Lifschitz-Kittel (LLK)law. The Switching Spectroscopy Piezo-response Force Microscopy provides clearevidence for the ferroelectric switching behavior in all the films. UsingQuasi-particle Self-consistent GW (QPGW) approximation we have investigatedphysical parameters relevant for direct tunneling behavior, namely theeffective mass and effective barrier height of electrons. For rhombohedral BFO,we report a large effective barrier height value of 3.6 eV, which is inreasonable agreement with nanoscale transport measurements. QPGW investigationsinto the tetragonal BFO structure with P4mm symmetry revealed a barrier heightof 0.38 eV, significantly lower compared to its rhombohedral counterpart. Thisdifference has very significant implications on the transport properties ofnearly tetragonal BFO phase.

Ferroelectric domain scaling and electronic properties in ultrathin BiFeO3 films on vicinal substrates