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We report results of investigation of the low-frequency excess noise indevice channels made from topological insulators - a new class of materialswith a bulk insulating gap and conducting surface states. The thin-film bismuthselenide samples were prepared by the "graphene-like" mechanical exfoliationfrom bulk crystals. The fabricated four-contact devices had linear current -voltage characteristics in the low-bias regime. The current fluctuations hadthe noise spectral density proportional to 1/f for the frequency f below 10kHz. The noise spectral density followed the quadratic dependence on the drain- source current. The obtained data is important for planning transportexperiments with topological insulators. We suggest that achieving the puretopological insulator phase with the current conduction through the "protected"surface states can lead to noise reduction via suppression of certainscattering mechanisms.

1/f Noise in Thin Films of Topological Insulator Materials