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We present direct measurements of depth-resolved band gap variations ofCuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers. A new measurement techniquecombining parallel measurements of local thin-film interference and spectralphotoluminescence was developed for this purpose. We find sample-dependentcorrelation parameters between measured band gap depth and compositionprofiles, and emphasize the importance of direct measurements. These resultsbring a quantitative insight into the electronic properties of the solar cellsand open a new way to analyze parameters that determine the efficiency of solarcells.

Direct measurements of band gap grading in polycrystalline CIGS solar cells