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Implanted 3.25 keV Ar+ ions have been used to modify the in-plane bulkanisotropy in thin films of epitaxially grown Laves phase YFe2. The magnetooptical Kerr effect, vibrating sample magnetometry and computational modelinghave been used to show that the dominant source of anisotropy changes frommagnetoelastic in as-grown samples to magnetocrystalline in ion implantedsamples. This change occurs at a critical fluence of order 1017 Ar+ ions cm-2.The change in source of the anisotropy is attributed to a relaxation of thestrain inherent in the epitaxially grown thin-films. Atomic force microscopyshows that the samples' topography remains unchanged after ion implantation.The ability to control the dominant source of magnetic anisotropy withoutaffecting the sample surface could have important consequences in thefabrication of patterned media for high use in density magnetic data storagedevices.

Controllable modification of the anisotropy energy in Laves phase YFe2 by Ar+ ion implantation