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We investigate the gate voltage dependence of capacitance of a system gate -2D electron gas (C-Vg). The abrupt drop of capacitance at decreasingconcentration was found. The possible reasons of this drop, namelyinhomogeneity of electron density distribution and serial resistance of 2Delectron gas are discussed. Simultaneous analysis of gate voltage dependencesof capacitance and resistance has shown that in heavily doped 2D systems themain role in the drop of capacitance at decreasing concentration plays theresistance of 2D gas. It is found that the investigated systems remainshomogeneous down to the low temperature conductivity about (10^-2-10^-3)e^2/h.

Analysis of homogeneity of 2D electron gas at decreasing of electron density