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We report the fabrication and characterization of an electrostatic quantumdot in pure Germanium with an integrated charge measurement transistor. Thedevice uses the Al2O3/Germanium interface for the confinement of carriers inthe Germanium and an hybrid design with an electron quantum dot and holetransistor for the charge detection. The hole transistor, using with NiGesource and drain contacts, despite the modest low temperature carrier mobilityof 450 cm2/Vs, has shown a sensitivity to the dot electric potential sufficientto detect single charges tunneling in and out of the quantum dot. The device isrealized with a two level gate stack, with the top level used to attractelectrons and the lower one to define the electron confinement potential andaccumulate the hole transistor. The possibility to improve the device operationusing a Al2O3/SiGe/Ge multilayer for the confinement of electrons at a smootherinterface is discussed.

Germanium electrostatic quantum dot with integrated charge detector in an MOS structure