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Recently, new quantum features have been observed and studied in the area ofnanostructured layers. Nanograting on the surface of the thin layer imposesadditional boundary conditions on the electron wave function and inducesG-doping or geometry doping. G-doping is equivalent to donor doping from thepoint of view of the increase in electron concentration n. However, there areno ionized impurities. This preserves charge carrier scattering to theintrinsic semiconductor level and increases carrier mobility with respect tothe donor-doped layer. G-doping involves electron confinement to thenanograting layer. Here, we investigate the system of multiple nanogratinglayers forming a series of hetero- or homojunctions. The system includes mainand barrier layers. In the case of heterojunctions, both types of layers wereG-doped. In the case of homojunctions, main layers were G-doped and barrierlayers were donor-doped. In such systems, the dependence of n on layer geometryand material parameters was analysed. Si and GaAs homojunctions andGaAs/AlGaAs, Si/SiGe, GaInP/AlGAs, and InP/InAlAs heterojunctions were studied.G-doping levels of 10^18-10^19 cm^-3 were obtained in homojunctions and type IIheterojunctions. High G-doping levels were attained only when the differencebetween band gap values was low.

Geometry-induced electron doping in periodic semiconductor nanostructures