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We study the effect of the impurity density on lifetimes and relaxationlengths of electron spins in the presence of a static electric field in an-type GaAs bulk. The transport of electrons and the spin dynamics aresimulated by using a semiclassical Monte Carlo approach, which takes intoaccount the intravalley scattering mechanisms of warm electrons in thesemiconductor material. Spin relaxation is considered through theD'yakonov-Perel mechanism, which is the dominant mechanism in III-Vsemiconductors. The evolution of spin polarization is analyzed by computing thelifetimes and depolarization lengths as a function of the doping density in therange 10^{13} - 10^{16} cm^{-3}, for different values of the amplitude of thestatic electric field (0.1 - 1.0 kV/cm). We find an increase of the electronspin lifetime as a function of the doping density, more evident for latticetemperatures lower than 150 K. Moreover, at very low intensities of the drivingfield, the spin depolarization length shows a nonmonotonic behaviour with thedensity. At the room temperature, the spin lifetimes and depolarization lengthsare nearly independent on the doping density. The underlying physics isanalyzed.

Doping dependence of spin dynamics of drifting electrons in GaAs bulks