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Using recent mathematical advances, a geometric approach to rare noise-driventransition events in nonequilibrium systems is given, and an algorithm forcomputing the maximum likelihood transition curve is generalized to the case ofstate-dependent noise. It is applied to a model of electronic transport insemiconductor superlattices to investigate transitions between metastableelectric field distributions. When the applied voltage $V$ is varied near asaddle-node bifurcation at $V_th$, the mean life time $<T>$ of the initialmetastable state is shown to scale like $log<T> \propto |V_th - V|^{3/2}$ as$V\to V_th$.

Rare Transition Events in Nonequilibrium Systems with State-Dependent  Noise: Application to Stochastic Current Switching in Semiconductor  Superlattices