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Basic SiC bipolar transistors have been studied in the past for theirapplications where high power or high temperature operation is required.However since the current gain in SiC bipolar transistors is very low andtherefore, a large base drive is required in high current applications.Therefore, it is important to enhance the current gain of SiC bipolartransistors. Using two dimensional mixed mode device and circuit simulation,for the first time, we report a new Darlington transistor formed using twopolytypes 3C-SiC and 4H-SiC having a very high current gain as a result of theheterojunction formation between the emitter and the base of transistor. Thereasons for the improved performance are analyzed.

New Silicon Carbide (SiC) Hetero-Junction Darlington Transistor