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In this work, we propose a new Stepped Oxide Hetero-Material Trench (SOHMT)power MOSFET with three sections in the trench gate (an N+ poly gate sandwichedbetween two P+ poly gates) and having different gate oxide thicknesses(increasing from source side to drain side). The different gate oxide thicknessserves the purpose of simultaneously achieving (i) a good gate control on thechannel charge and (ii) a lesser gate to drain capacitance. As a result, weobtain higher transconductance as well as reduced switching delays, making theproposed device suitable for both RF amplification and high speed switchingapplications. In addition, the sandwiched gate with different work functiongate materials modifies the electric field profile in the channel resulting inan improved breakdown voltage. Using two-dimensional simulations, we have shownthat the proposed device structure exhibits about 32% enhancement in breakdownvoltage, 25% reduction in switching delays, 20% enhancement in peaktransconductance and 10% reduction in figure of merit (product of ON-resistanceand gate charge) as compared to the conventional trench gate MOSFET.

A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance