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In this letter we discuss how the short channel behavior in sub 100 nmchannel range can be improved by inducing a step surface potential profile atthe back gate of an asymmetrical double gate (DG) Silicon-On-Insulator (SOI)Metal-Oxide-Semiconductor Field-Effect- Transistor (MOSFET) in which the frontgate consists of two materials with different work functions.

Diminished Short Channel Effects in Nanoscale Double-Gate  Silicon-On-Insulator Metal-Oxide- Semiconductor Field-Effect-Transistors due  to Induced Back-Gate Step Potential