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A new Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET) is proposedand verified by two-dimensional simulation. Unlike in the case of conventionalBMFET, which uses deep diffused p+-regions as the gate, the proposed deviceuses the Schottky gate formed on the silicon planar surface for injectingminority carriers into the drift region. The SBMFET is demonstrated to haveimproved current gain, identical breakdown voltage and ON-voltage drop whencompared to the conventional BMFET. Since the fabrication of the SBMFET is muchsimpler and obliterates the need for deep thermal diffusion of P+-gates, theSBMFET is expected to be of great practical importance in medium-powerhigh-current switching applications.

New Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET): Design and Analysis using Two-dimensional Simulation