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This paper critically examines the leakage current reduction techniques forimproving the performance of poly-Si TFTs used in active matrix liquid crystaldisplays. This is a first comprehensive study in literature on this topic. Thereview assesses important proposals to circumvent the leakage current problemin poly-Si TFTs and a short evaluation of strengths and weaknesses specific toeach method is presented. Also, a new device structure called the Triple Gatepoly-Si TFT (TG-TFT) is discussed. The key idea in the operation of this deviceis to make the dominant conduction mechanism in the channel to be controlled bythe accumulation charge density modulation by the gate (ACMG) and not by thegate-induced grain barrier lowering (GIGBL). Using twodimensional andtwo-carrier device simulation, it is demonstrated that the TG-TFT exhibits asignificantly diminished pseudo-subthreshold conduction leading to severalorders of magnitude reduction in the OFF state leakage current when compared toa conventional poly-Si TFT. The reasons for the improved performance areexplained.

Leakage Current Reduction Techniques in Poly-Si TFTs for Active Matrix Liquid Crystal Displays:A Comprehensive Study