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Transistors based on various types of non-silicon nanowires have shown greatpotential for a variety of applications, especially for those requiretransparency and low-temperature substrates. However, critical requirements forcircuit functionality such as saturated source-drain current, and matchedthreshold voltages of individual nanowire transistors in a way that iscompatible with low temperature substrates, have not been achieved. Here weshow that femtosecond laser pulses can anneal individual transistors based onIn2O3 nanowires, improve the saturation of the source-drain current, andpermanently shift the threshold voltage to the positive direction. We appliedthis technique and successfully shifted the switching threshold voltages ofNMOS based inverters and improved their noise margin, in both depletion andenhancement modes. Our demonstration provides a method to trim the parametersof individual nanowire transistors, and suggests potential for large-scaleintegration of nanowire-based circuit blocks and systems.

Improved current saturation and shifted switching threshold voltage in  In2O3 nanowire based, fully transparent NMOS inverters via femtosecond laser  annealing