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The spectral response of quantum well solar cells (QWSCs) is well understood.We describe work on QWSC dark current theory which combined with SR theoryyields a system efficiency. A methodology published for single quantum well(SQW) systems is extended to MQW systems in the Al(x) Ga(1-x) As andInGa(0.53x) As(x) P systems. The materials considered are dominated byShockley-Read-Hall (SRH) recombination. The SRH formalism expresses the darkcurrent in terms of carrier recombination through mid-gap traps. The SRHrecombination rate depends on the electron and hole densities of states (DOS)in the barriers and wells, which are well known, and of carrier non-radiativelifetimes. These material quality dependent lifetimes are extracted fromanalysis of suitable bulk control samples. Consistency over a range of AlGaAscontrols and QWSCs is examined, and the model is applied to QWSCs in InGaAsP onInP substrates. We find that the dark currents of MQW systems require areduction of the quasi Fermi level separation between carrier populations inthe wells relative to barrier material, in line with previous studies.Consequences for QWSCs are considered suggesting a high efficiency potential.

Modelling Multi Quantum Well Solar Cell Efficiency