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Electrodeposited thin film cells have been fabricated with record-breakingefficiencies of 11.4%. This presentation examines conversion mechanisms incells with a focus on the effect of CdS buffer layers using a range ofcomplementary tools. Dark currents (IVs) are well described by series andparallel resistances, and two dominant recombination mechanisms represented byparallel diodes. Measurements of IV as a function of temperature (IVT) allowextraction of activation energies corresponding to these processes and indicatetheir spatial position. Admittance spectroscopy (AS) gives an independentestimate of the same energies, and yields values of the defect densities ofstates in the forbidden gap. Two dominant levels are apparent, confirming thevalidity of the IV analysis. Spectral response (QE) measurements are presented,yielding information on minority carrier collection efficiency. The differentmethods of parameter extraction are correlated and indicate recombinationlevels some hundreds of meV above the valence band and below the conductionband. Bias dependence of admittance spectroscopy gives indications on thelocalisation of defect centres with one defect situated at the CdSheterointerface and the other in the bulk of the depletion region. The darkcurrent analysis indicates that photogenerated minority carrier collection isthe limiting factor in these cells at the operating bias.

Analysis of efficiency limiting processes in thin film Cu(In,Ga)(S,Se)2 electrodeposited solar cells