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We prepared Ga0.95Mn0.05As films on top of periodic arrays of InAs quantumdots. X-ray diffraction reveals periodically strained films, commensurate tosubstrate's patterning. The dots produce a tensile strain in GaMnAs whilebetween the dots strain is compressive. Our experiments confirm that theaverage tensile strain in the film increases with decreasing dots separation.This trend in strain is accompanied by an increase of the out-of-planemagnetization component familiar from the established relation between strainand magnetic anisotropy in GaMnAs films. Our work provides a new route forcontrolling magneto-crystalline anisotropies in GaMnAs on a nanometer scale.

Structural and magnetic evidence of confined strain fields in GaMnAs grown on ordered arrays of zero-dimensional nanostructures