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A small magnetic field (~30 mT) can effectively modulate theelectroluminescence, conductance and/or photocurrent of organic semiconductorbased devices, up to 10% at room temperature. This organic magnetic fieldeffect (OMFE) is one of the most unusual phenomena of both organic electronicsand, more basically, magnetism, since all device components are nonmagnetic.However, in spite of latest surge of research interest, its underlyingmechanism is still hotly debated. Here we experimentally identify that themagnetic field induced increase of intersystem crossing rate (between eitherexcitons or polaron pairs), and decrease of triplet exciton-polaron quenchingrate are responsible for the observed OMFEs. The diversity of observed OMFEresults, such as sign change and operating condition dependence, originatesfrom the difference of devices physics.

Origin and the role of device physics in the magnetic field effect in organic semiconductor devices