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The influence of temperature and transport conditions on the electron spinrelaxation in lightly doped n-type GaAs semiconductors is investigated. A MonteCarlo approach is used to simulate electron transport, including the evolutionof spin polarization and relaxation, by taking into account intravalley andintervalley scattering phenomena of the hot electrons in the medium. Spinrelaxation lengths and times are computed through the D'yakonov-Perel process,which is the more relevant spin relaxation mechanism in the regime of interest(10 < T < 300 K). The decay of the initial spin polarization of the conductionelectrons is calculated as a function of the distance in the presence of astatic electric field varying in the range 0.1 - 2 kV/cm. We find that theelectron spin depolarization lengths and times have a nonmonotonic dependenceon both the lattice temperature and the electric field amplitude.

Temperature dependence of spin depolarization of drifting electrons in n-type GaAs bulks