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The exciton states in strained (In,Ga)As nanorings embedded in a GaAs matrixare computed. The strain distribution is extracted from the continuummechanical model, and the exact diagonalization approach is employed to computethe exciton states. Weak oscillations of the ground exciton state energy withthe magnetic field normal to the ring are an expression of the excitonicAharonov-Bohm effect. Those oscillations arise from anticrossings between theground and the second exciton state and can be enhanced by increasing the ringwidth. Simultaneously, the oscillator strength for exciton recombinationexhibits oscillations, which are superposed on a linear increase with magneticfield. The obtained results are contrasted with previous theoretical resultsfor 1D rings, and differences are explained to arise from different confinementpotentials for the electron and the hole, and the large diamagnetic shiftpresent in the analyzed type-I rings. Furthermore, our theory agreesqualitatively well with previous photoluminescence measurements on type-IIInP/GaAs quantum dots.

Anticrossing-induced optical excitonic Aharonov-Bohm effect in strained type-I semiconductor nanorings