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The band-to-band tunneling transistors have some performance advantages overthe conventional MOSFETs due to the <60mV/dec sub-threshold slope. In thispaper, carbon nanotubes are used as a model channel material to address issuesthat we believe will apply to BTBT FETs vs. MOSFETs more generally. We usepz-orbital tight-binding Hamiltonian and the non-equilibrium Green function(NEGF) formalism for rigorous treatment of dissipative quantum transport. Adevice level comparison of p-i-n TFETs and n-i-n MOSFETs in both ballistic anddissipative cases has been performed previously. In this paper, the possibilityof using p-i-n TFETs in ultra-low power sub-threshold logic circuits isinvestigated using a rigorous numerical simulator. The results show that, insub-threshold circuit operation, the p-i-n TFETs have better DCcharacteristics, and can deliver ~15x higher performance at the iso-P_LEAKAGE,iso-VDD conditions. Because p-i-n TFETs can operate at lower VDD than n-i-nMOSFETs, they can deliver ~3x higher performance at the same power(P_OPERATION). This results in ~3x energy reduction under iso-delay conditions.Therefore the p-i-n TFETs are more suitable for sub-threshold logic operation.

p-i-n Tunnel FETs vs. n-i-n MOSFETs: Performance Comparison from Devices to Circuits