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Coalescence overgrowth of pattern-grown GaN nanocolumns (NC) on c-planesapphire substrate with metal organic chemical vapour deposition isdemonstrated. The subsequent coalescence overgrowth opens a possibility fordislocation reduction due to the lateral strain relaxation in columnargeometry. We present further growth optimization and innovativecharacterization of MOCVD layers, overgrown on the columnar structure withvarying diameter of colums. Nanoimprint lithography was applied to opencircular holes of 250, 300, 450, 600 nm in diameter on the SiO2 layer,deposited on the GaN layer on c-plane sapphire template.

Four wave mixing study on coalescence overgrowth of GaN nanocolumns on sapphire