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We report on the optical properties of a newly developed site-controlledInGaAs Dots in GaAs barriers grown in pre-patterned pyramidal recesses bymetalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonicemission from an ensemble of quantum dots is found to be extremely narrow, witha standard deviation of 1.19 meV. A dramatic improvement in the spectral purityof emission lines from individual dots is also reported (18-30 ueV) whencompared to the state-of-the-art for site controlled quantum dots.

A novel site-controlled quantum dot system with high uniformity and narrow excitonic emission