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The knowledge of the conduction mechanisms in a Schottky barrier is essential to calculate the Schottky barrier parameters and to explain the observed effects. In the present work, we report temperature- dependent current-voltage characteristics of (Mo/Au)/Al0.26Ga0.74N/GaN/Si/ Schottky barrier diodes. Measurements were performed in the temperature range of 80 -300 K.Results have been explained based on the thermionic emission mechanism with lateral inhomogeneity at the (Mo/Au/AlGaN/GaN/Si) interface. As is shown, the barrier height ΦB0 as well as the ideality factor n exhibit an important temperature dependence and the anomaly resulting from this dependence has been explained by invoking two sets of Gaussian distributions at the metal/semiconductor interface for temperature ranging from 80 K to 160 K and from 160K to300 K, respectively. It is also found that the values of Rs obtained from Cheung's method strongly depend on temperature and decrease with decreasing temperature. Keywords: Schottky barrier, Current-voltage characteristics, Ideality factor, Inhomogeneity, Thermionic emission.

Electron/transport in (Mo/Au)/AlGaN/GaN Schottky diode