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In the present study potassium nanostructure was grown on the high index reconstructed Si (5512) 2x1 surface due to their potential application in the night vision devices (NVD). The formation of potassium atoms (K) on high index Si semiconductor under controlled kinetic and thermodynamic growth conditions having desired shape and size with low work function were studied. The studies have been performed on a reconstructed high index silicon surface at room temperature as well as on high substrate temperatures such as (375, 550 and 680 oC). The structural properties of the high index trenched template have been exploited for the development of desired nanostructures of different size and shape. It is constructed to a planner surface having a single domain with 1-D symmetry and relatively largest unit cell (5.35 nm). In the present study, growth of potassium nanostructures on the high index reconstructed Si (5 5 12) surface occur, which can be potentially utilized in night vision devices. The experiments were performed in-situ in a Ultra high vacuum (UHV) system in-housed with various surface sensitive techniques such as Auger Electron Spectroscopy (AES), Electron Energy Loss Spectroscopy (EELS), and Low Energy Electron Diffraction (LEED).

Formation of Potassium Nanostructures on Reconstructed High Index Si (5512)2x1 Surface for Night Vision Devices (NVD)