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In this research work, Copper(I)oxide (Cu2O) thin films were synthesized using Successive Ionic Layer Adsorption and Reaction (SILAR) technique. Fixed concentrations and temperature of two anionic precursors (1.0M at 70 o C for KOH and NaOH) and same cationic precursor (Copper Sulphate complex solution at room temperature) were used to obtain two set of films.Optical properties and applications of the films were examined. X-ray diffraction (XRD) analysis showed that both films are polycrystalline with a simple cubic structure. The absorbance, transmittance and reflectance of the material revealed Cu2O applicability as a Transparent Conducting Oxide (TCO). The energy band gaps obtained were 2.2 and 2.3eV for the different precursors. This indicates that the choice of precursor in this deposition technique has an effect on the energy band gap of the material.

Optical Properties of Copper (I) Oxide Thin Films Synthesized by SILAR Technique