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In this study, design and simulation of 15GHZ and 10GHZ Low Noise Amplifiers (LNA) have been explored. The simulation has been performed by using the Agilent Advanced Design System (ADS) Software. Tuning and optimization tools of ADS software have been used to optimize results. The minimum Noise Figure (NFmin) of the High Electron Mobility Transistor (HEMT) device in our simulation, is lower than previous works. We have designed a 15GHZ LNA based on three design methods basing on the lumped, the distributed and the radial stub elements. The scattering parameters of 15GHZ designed amplifier in the following manner, input return loss (S11), output return loss (S22), forward gain (S21), and isolation (S12) are -17.15dB, -16.92dB and 14.35dB as follow as -17.023 dB, respectively. Furthermore, noise figure of the 15GHZ designed amplifiers is 0.92 dB. Furthermore, the simulation results show that the scattering parameters and noise figure of 10GHZ LNA amplifiers are improved noticeably with respect to the previous works.

Design of Low Noise Amplifiers at 10 GHZ and 15 GHZ for Wireless Communication Systems