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In this paper we have designed and simulated Hybrid MOSFET(with two substrate material ) and compared the drain characteristics with basic MOSFET( single substrate material ). Here we observed that drain current starts saturating at much earlier time for hybrid MOSFET than basic MOSFET but the drain current value is very low in hybrid MOSFET. To increase the drain current value in the hybrid MOSFET different measures like gate oxide material (HFO2) and variable oxide thickness have been used which leads better performance. Design, Simulation and analysis have been done with the help of Visual TCAD. Keyword: N channel MOSFET, Hafnia(HFO2), Hybrid MOSFET, Visual TCAD

Performance Analysis of Hybrid Ge-Si Based Mosfet with Different Gate Oxide Thickness and Material