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This work models the quantization effects dominating a nano-dimensional symmetric InAlAs/InGaAs double heterostructure DG-HEMT (double-gate HEMT). This is done by solving the one-dimensional (1D) time- independent Schrodinger equation in the nanoscale channel comprising of symmetric double triangular quantum well (DTQW) separated by a barrier in the DG-HEMT. The electron confinement due to the finite potential profile of a DTQW is analyzed and eigenenergies and the wave functions are calculated. Effect of the external applied fields at the gates controlling the electron confinement in the channel has been studied. The electron concentration is calculated and its distribution between the two quantum wells in InGaAs channel under the influence of different gate bias has been studied. A shift in electron concentration profile is observed from one well to another by the tunneling phenomenon at different applied electric fields indicating coupling between the two quantum wells. The calculated electron concentration profile obtained at equilibrium has been compared with the simulated results obtained from Quantum moments model and also with a semi-classical model.

Modeling Quantum Effects In The Channel Of A Nanoscale Symmetric Double Gate InAlAs/InGaAs Double Heterostructure HEMT