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In this paper, a 65nm scaled channel of PMOS is fabricated and studied its electrical characteristics. Athena module of SILVACO software was use. The two characteristics such as Id – Vg and Id – Vd reading Vth parameters for both characteristics for different process parameters like: gate oxide thickness, channel doping and channel implantation. From the simulation result of VTH value is achieved -2.55427v for 65nm PMOS transistor. That is well known within ITRS(international technology roadmap for semiconductor) for a 65nm PMOS transistor.

Optimization of Threshold Voltage for 65nm PMOS Transistor using Silvaco TCAD Tools