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A surface roughness reference has been developed by using an anisotoropic etching of a (100) silicon wafer. As the etching process of the reference is dominated by the crystal orientation, it has a geometrically accurate profile compared with those manufactured by conventional mechanical tooling techniques. The reference has a serial triangle profile so that calibration in both horizontal and vertical dimensions can be performed easily and simultaneously. Dimensions of 30 to 3ƒÊm-pitch references are evaluated by using a stylus profiler, resulting in sub-ƒÊm pitch errors and an average valley depth error less than 0.32ƒÊm. Little damage by the stylus is observed after measurements, since the silicon is harder than metal materials.

A Surface Roughness Reference Fabricated by Using an Anisotoropic Etching of Silicon Crystal