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The authors have developed a new type of channel electron multipliers (CEM's) which are made of the caramic semiconductors of barium titanate family or zinc oxide-titanium oxide family. The ceramic CEM's have a gain of 108 at the applied voltage of 3•`4kV, and have a typical value of resistance 109ƒ¶. The CEM's of barium titanate family have positive resistivity-temperature characteristics unlike those of the conventional type using a semiconductor thin film on the inner wall of a glass tube. This ensures a protection against a •h thermal run away•h and the selection of the value of resistance of tube materials is not unduly limited. It was also expected that the ceramic CEM's were durable and stable both mechanically and chemically. Experiments using mainly those of barium titanate family were performed to clarify the upper limit of the operation tem-

Ceramic Secondary Electron Multipliers for Detecting Charged Paticles and Radiation