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The fabrication of Schottky diodes using electroplated ntype CdSe thin films and gold metal contact have been successfully achieved. The electronic properties of the fabricated diodes with the device structure glass/FTO/n-CdSe/Au have been investigated by current-voltage (I-V) and capacitance-voltage (CV) measurement techniques. The I-V characteristics revealed a good rectifying behaviour with an ideality factor of 1.50, a potential barrier height (φb) >0.79 eV and rectification factor (RF) surpassing 10 at 1.0 V. Results from the C-V measurement showed that the fabricated Schottky diodes have doping density of ~1.61 × 10 17 cm -3 and a built-in potential (Vbi) of 0.24 V which falls in the range of reported Vbi values for Schottky diodes. Both I-V and C-V parameters revealed that the CdSe Schottky diodes possess qualities for excellent performance in electronics circuit or as an electronic device. Original Research Article Olusola et al.; AJR2P, 1(2): 1-8, 2018; Article no.AJR2P.41178 2

Electronic Behaviour of Schottky Diodes Fabricated from Electroplated CdSe Semiconductors