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A Phase-Change Memory (PCM) physical-based compact modeling of the subthreshold conduction together with the threshold switching is proposed and the results are compared to experimental data collected on a PCM cell embedded in a 90nm technology. The good correlation between simulations and measurements for all intermediate states with a single set of parameters proves the accuracy of the model. Moreover, the constant threshold power measured brings evidence in favor of a thermally activated threshold in nanoscale PCM devices.

Continuous Multilevel Compact Model of Subthreshold Conduction and Threshold Switching in Phase-Change Memory